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IBM gives update on STT-based MRAM
SAN FRANCISCO -- At this week's International Electron Devices Meeting (IEDM) here, IBM Corp. will provide a sneak preview of its MRAM, based on spin torque transfer (STT) technology. In a paper, IBM will describe the key element of a 4-Kbit test device. The element, dubbed a magnetic tunnel ...
IBM AP Announcement Letter
IBM AP Announcement Letter
www-01.ibm.com — RAID DASD high-speed storage Integrated color calibration Integrated WACOM palm rest digitizer and pen Displays High-performance mobile graphics: Intel Centrino® 2 with vPro and Core 2 Extreme technologies Intel PM45 Express chip set PC3-8500 double ... (more) IBM AP Announcement Letter
IBM's prototype STT MRAM device spins your bits right round, baby, right round
IBM's prototype STT MRAM device spins your bits right round, baby, right round
engadget.com — If you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM , and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as ... (more) IBM's prototype STT MRAM device spins your bits right ...
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IBM's prototype STT MRAM device spins your bits right round, baby, right round
Engadget — If you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM, and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as we know it. If you can't get your noggin around the concepts, know the potential: a new type of memory that will be cheaper, faster, and more efficient than current RAM, while also having the flash-like ability to retain data without power. IBM, who first floated the idea last year, is now sharing some more details ...

IBM’s fancy new STT-MRAM prototype that holds 4Kb of data
CrunchGear — ... Three cheers for new, strange technologies that won’t see the light of day for many, many years! Specifically, IBM’s example of spin-torque-transfer magnetoresistive random access memory (STT-MRAM) has wowed the MRAM press with its latest prototype. The device can store a whopping 4Kb of data for around 10 years without any electricity flowing through its veins. ...

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